Inductively coupled plasma etching of III-V semiconductors in Cl2-based chemistries

被引：0

作者：

Lee, JW ^{[1
]}

Lambers, ES

Abernathy, CR

Pearton, SJ

Shul, RJ

Ren, F

Hobson, WS

Constantine, C

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[4] Plasma Therm Inc, St Petersburg, FL 33716 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 05期

关键词：

etching; compound semiconductors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inductively coupled plasma (ICP) etching of all of the main III-V compound semiconductors is reported as a function of source and chuck power, pressure and gas additive (Ar, N-2, H-2) in Cl-2 plasmas. Etch rates between 2000 and 5000 Angstrom min(-1) were obtained for all materials at moderate source power (750 W) and low d.c, self-bias (less than or equal to -150 V). Surface morphologies were smooth over a broad range of conditions for Ga-based materials, while for In-based semiconductors there was a much narrower window of appropriate ion-to-neutral ratios to obtain smooth etched surfaces on In-based semiconductors. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：A65 / A73

页数：9

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