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Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
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Universidade de Sao Paulo, Sao Paulo, Brazil
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Universidade de Sao Paulo, Sao Paulo, Brazil
[
1
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Journal of Solid-State Devices and Circuits
|
1997年
/ 5卷
/ 01期
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15
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页码:1 / 4
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