Planar self-interstitial in silicon

被引:0
|
作者
机构
来源
Phys Rev Lett | / 9卷 / 1799期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] ATOMISTIC CALCULATION OF THE SELF-INTERSTITIAL DIFFUSIVITY IN SILICON
    MAROUDAS, D
    BROWN, RA
    APPLIED PHYSICS LETTERS, 1993, 62 (02) : 172 - 174
  • [22] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION
    HARRIS, RM
    ANTONIADIS, DA
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 937 - 939
  • [23] Copper interactions with H, O, and the self-interstitial in silicon
    West, D
    Estreicher, SK
    Knack, S
    Weber, J
    PHYSICAL REVIEW B, 2003, 68 (03)
  • [24] Mechanism and energetics of self-interstitial formation and diffusion in silicon
    Vaidyanathan, Ramakrishnan
    Jung, Michael Y. L.
    Seebauer, Edmund G.
    PHYSICAL REVIEW B, 2007, 75 (19)
  • [25] Self-interstitial diffusion and clustering with impurities in crystalline silicon
    Mirabella, S
    De Salvador, D
    Napolitani, E
    Giannazzo, F
    Impellizzeri, G
    Bisognin, G
    Terrasi, A
    Raineri, V
    Berti, M
    Carnera, A
    Drigo, AV
    Priolo, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 : 80 - 89
  • [26] Silicon self-interstitial cluster formation and dissolution in SOI
    Saavedra, A
    Frazer, J
    Wrigley, D
    Jones, K
    Avci, I
    Earles, S
    Law, M
    Jones, E
    SILICON FRONT-END JUNCTION FORMATION TECHNOLOGIES, 2002, 717 : 95 - 100
  • [27] Hydrogen-saturated self-interstitial in silicon and germanium
    Budde, M.
    Nielsen, B.Bech
    Leary, P.
    Goss, J.
    Jones, R.
    Briddon, P.R.
    Oberg, S.
    Breuer, S.J.
    1997, Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland (258-263)
  • [28] Self-interstitial trapping by carbon complexes in crystalline silicon
    Mattoni, A
    Bernardini, F
    Colombo, L
    PHYSICAL REVIEW B, 2002, 66 (19): : 1 - 6
  • [29] The hydrogen-saturated self-interstitial in silicon and germanium
    Budde, M
    Nielsen, BB
    Leary, P
    Goss, J
    Jones, R
    Briddon, PR
    Oberg, S
    Breuer, SJ
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 35 - 40