Diffusion of gallium vacancies from low-temperature-grown GaAs

被引：0
|
作者：
Ohbu, Isao [1 ]
Takahama, Mitsuharu [1 ]
Imamura, Yoshinori [1 ]
机构：
[1] Hitachi Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1992年 / 31卷 / 12 A期
关键词：
Semiconducting gallium arsenide;
D O I：
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学科分类号：
摘要：
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