GaAs heteroepitaxial growth on an InP (001) substrate

被引：0
|
作者：
Tanaka, Ichiro [1 ]
Ohkouchi, Shunsuke [1 ]
机构：
[1] Optoelectronics Technology Research, Lab, Tsukuba, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 9 B期
关键词：
Crystals--Epitaxial Growth - Microscopic Examination--Scanning Electron Microscopy - Molecular Beam Epitaxy - Semiconducting Indium Phosphide;
D O I：
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中图分类号：
学科分类号：
摘要：
We have observed GaAs growth processes on an InP (001) surface thermally cleaned in an arsenic flux using a multichamber ultrahigh-vacuum scanning tunneling microscope (UHV-STM) equipped with a molecular beam epitaxy (MBE) facility. When either 1 monolayer (ML) or 1.5 ML GaAs was deposited on an InP (001) surface, two-dimensional growth was observed. On the other hand, island formation was observed for 2.5 ML GaAs deposition.
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页码：1662 / 1664
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