Growth of InAsSb Quantum Dashes on InP (001) Substrate and Their Photoluminescence Properties

The authors have studied the growth of InAsSb quantum dashes on InP (001) substrate in a low-pressure metal organic vapor phase epitaxy systematically. Effects of the growth conditions, such as substrate temperature, antimony composition, deposition thickness and matrix have been investigated carefully to obtain high quality InAsSb quantum dashes and a comprehensive explanation of growth mechanism has been given. Surface morphology has been characterized by atomic force microscopy revealing that the antimony surfactant effect is a key factor in controlling the shape of those structures. Moreover the various composition and nominal thickness have complicated effects on the photoluminescence emission wavelength and we have demonstrated that the wavelength of InAsSb quantum dashes ranges from 1.48 mu m to 2.03 mu m. Based on these results, it is concluded that the incorporation of antimony is a competitive technique to extend the emission wavelength compared with InAs/InP material system, which proves to be a promising way to fabricate mid-infrared emitters.