MODEL DESCRIBING HOT-CARRIER AND RADIATION EFFECTS IN MOS TRANSISTORS.

被引：0

作者：

McBrayer, J.D. ^{[1
]}

Pastorek, R.A. ^{[1
]}

Jones, R.V. ^{[1
]}

Ochoa Jr., A. ^{[1
]}

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

IEEE Transactions on Nuclear Science | 1987年 / NS-34卷 / 06期

关键词：

RADIATION EFFECTS - Mathematical Models - TRANSISTORS; FIELD EFFECT - Radiation Damage;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Data that describe the magnitude and type of damage created in MOS transistors by hot-carrier and ionizing-radiation environments are presented. The interaction of the effects of these types of damage is described by a qualitative model that divides the damage into two damage regions.

引用

共 50 条

[41] A CROSS-SECTION OF HOT-CARRIER PHENOMENA IN MOS ULSIS
TAKEDA, E
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 535 - 551
[42] Ionizing radiation and hot carrier effects in SiC MOS devices
de Vasconcelos, EA
da Silva, EF
Katsube, T
Yoshida, S
BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 389 - 391
[43] Hot-carrier degradation phenomena in lateral and vertical DMOS transistors
Moens, P
Van den bosch, G
Groeseneken, G
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (04) : 623 - 628
[44] Effects of drain structures on the hot-carrier degradation of high-voltage LDMOS transistors
Lee, DW
Roh, TM
Kim, J
Koo, JG
Nam, KS
Kim, DY
Park, HS
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S542 - S545
[45] PROTON AND HEAVY-ION RADIATION DAMAGE STUDIES IN MOS TRANSISTORS.
Stapor, W.J.
August, L.S.
Wilson, D.H.
Oldham, T.R.
Murray, K.M.
IEEE Transactions on Nuclear Science, 1985, NS-32 (06)
[46] Effects of hydrogenation on the performance and hot-carrier endurance of polysilicon thin-film transistors
Farmakis, FV
Dimitriadis, CA
Brini, J
Kamarinos, G
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) : 83 - 85
[47] An analytical study of hot-carrier degradation effects in sub-micron MOS devices
Singh, A. K.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2008, 42 (02): : 87 - 94
[48] Effect of NDD Dosage on Hot-Carrier Reliability in DMOS Transistors
Chen, Jone F.
Tian, Kuen-Shiuan
Chen, Shiang-Yu
Wu, Kuo-Ming
Liu, C. M.
ISQED 2009: PROCEEDINGS 10TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, VOLS 1 AND 2, 2009, : 226 - +
[49] A new characterization method for hot-carrier degradation in DMOS transistors
Pieracci, A
Ricco, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) : 1855 - 1858
[50] THE CHARACTERIZATION OF HOT-CARRIER DAMAGE IN P-CHANNEL TRANSISTORS
DOYLE, BS
MISTRY, KR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 152 - 156

← 1 2 3 4 5 →