MODEL DESCRIBING HOT-CARRIER AND RADIATION EFFECTS IN MOS TRANSISTORS.

被引：0

作者：

McBrayer, J.D. ^{[1
]}

Pastorek, R.A. ^{[1
]}

Jones, R.V. ^{[1
]}

Ochoa Jr., A. ^{[1
]}

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

IEEE Transactions on Nuclear Science | 1987年 / NS-34卷 / 06期

关键词：

RADIATION EFFECTS - Mathematical Models - TRANSISTORS; FIELD EFFECT - Radiation Damage;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Data that describe the magnitude and type of damage created in MOS transistors by hot-carrier and ionizing-radiation environments are presented. The interaction of the effects of these types of damage is described by a qualitative model that divides the damage into two damage regions.

引用

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