MODEL DESCRIBING HOT-CARRIER AND RADIATION EFFECTS IN MOS TRANSISTORS.

被引：0
|
作者：
McBrayer, J.D. [1 ]
Pastorek, R.A. [1 ]
Jones, R.V. [1 ]
Ochoa Jr., A. [1 ]
机构：
[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA
来源：
IEEE Transactions on Nuclear Science | 1987年 / NS-34卷 / 06期
关键词：
RADIATION EFFECTS - Mathematical Models - TRANSISTORS; FIELD EFFECT - Radiation Damage;
D O I：
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学科分类号：
摘要：
Data that describe the magnitude and type of damage created in MOS transistors by hot-carrier and ionizing-radiation environments are presented. The interaction of the effects of these types of damage is described by a qualitative model that divides the damage into two damage regions.
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