Stable photoconductivity in metastable a-Si:H under high-energy proton irradiation

被引：0
|
作者：
Kishimoto, N. [1 ]
Amekura, H. [1 ]
Kono, K. [1 ]
Lee, C.G. [1 ]
机构：
[1] Natl Research Inst for Metals, Ibaraki, Japan
来源：
Journal of Non-Crystalline Solids | / 227-230卷 / Pt A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：238 / 242
相关论文
共 50 条
  • [21] High-energy proton irradiation effects in GaAs devices
    Warner, JH
    Walters, RJ
    Messenger, SR
    Summers, GP
    Khanna, SM
    Estan, D
    Erhardt, LS
    Houdayer, A
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2887 - 2895
  • [22] Contact limitation of secondary photoconductivity in intrinsic a-Si:H
    Kopidakis, N
    Tzanetakis, P
    Stradins, P
    Fritzsche, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 201 - 205
  • [23] 'IN SITU' MEASUREMENTS OF THE TRANSIENT PHOTOCONDUCTIVITY IN A-Si:H.
    Werner, A.
    Kunst, M.
    Beck, G.
    Lilie, J.
    Tributsch, H.
    1600, (56):
  • [24] EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN a-Si:H.
    Jackson, Warren B.
    Thompson, Malcolm J.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 883 - 885
  • [25] Superior Stability of CsPbBr3 Films under High-Energy Proton Irradiation
    Aleksanyan, Eduard
    Harutyunyan, Vachagan
    Badalyan, Anush
    Grigoryan, Norayr
    Margaryan, Narek
    Manukyan, Andranik
    Matevosyan, Lenrik
    Okrepka, Halyna
    Trepalin, Vadim
    Ding, Yang
    Zhukovskyi, Maksym
    Kuno, Masaru
    Aprahamian, Ani
    Manukyan, Khachatur
    JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (40): : 16854 - 16860
  • [26] Infrared photoconductivity in heavily nitrogen doped a-Si:H
    Shelton, David J.
    Ginn, James. C.
    Coffey, Kevin R.
    Boreman, Glenn D.
    AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
  • [27] Contact limitation of secondary photoconductivity in intrinsic a-Si:H
    Kopidakis, N.
    Tzanetakis, P.
    Stradins, P.
    Fritzsche, H.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 201 - 205
  • [28] PHOTOCONDUCTIVITY OF LIGHTLY BORON DOPED a-Si:H.
    Jousse, D.
    Chaussat, C.
    Vaillant, F.
    Bruyere, J.C.
    Lesimple, F.
    1600, (77-78 Dec II):
  • [29] Nature of photoconductivity decay spectral dependence in a-Si:H
    Koughia, C.V.
    Terukov, E.I.
    Journal of Non-Crystalline Solids, 1991, 137-38 (pt 1) : 603 - 606
  • [30] Light-induced metastable changes in defect density and photoconductivity of a-Si:H between 4.2 and 300 K
    Stradins, P
    Fritzsche, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 432 - 435
12345