DIFFUSION AT METAL/AMORPHOUS SiO2 INTERFACE.

被引：0

作者：

Kanameda, Yasumasa ^{[1
]}

Nagata, Kazuhiro ^{[1
]}

Goto, Kazuhiro S. ^{[1
]}

机构：

[1] Diesel Instrument Co, Higashimatsuyana, Jpn, Diesel Instrument Co, Higashimatsuyana, Jpn

来源：

| 1986年 / 27期

关键词：

OXIDES; -; Diffusion;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Amorphous SiO//2(a-SiO//2) was joined with Ni, Fe, Co or Cu by heating. The distribution of elements near the interface were measured in order to investigate the mechanism of joining. The diffusion of metal oxide in a-SiO//2 is caused by atomic defects. The diffusion coefficient is estimated to be 10** minus **1**7 m**2/s. That of NiO in a-SiO//2 is approximately proportional to Po//2**1**/**4.

引用

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