DIFFUSION AT METAL/AMORPHOUS SiO2 INTERFACE.

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作者
Kanameda, Yasumasa [1 ]
Nagata, Kazuhiro [1 ]
Goto, Kazuhiro S. [1 ]
机构
[1] Diesel Instrument Co, Higashimatsuyana, Jpn, Diesel Instrument Co, Higashimatsuyana, Jpn
关键词
OXIDES; -; Diffusion;
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摘要
Amorphous SiO//2(a-SiO//2) was joined with Ni, Fe, Co or Cu by heating. The distribution of elements near the interface were measured in order to investigate the mechanism of joining. The diffusion of metal oxide in a-SiO//2 is caused by atomic defects. The diffusion coefficient is estimated to be 10** minus **1**7 m**2/s. That of NiO in a-SiO//2 is approximately proportional to Po//2**1**/**4.
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