Study on photoluminescence emission in cubic AlxGa1-xN/GaAs (100)

被引：0
|
作者：
Zhao, Degang [1 ]
Yang, Hui [1 ]
Xu, Dapeng [1 ]
Li, Jianbin [1 ]
Wang, Yutian [1 ]
Zhen, Lianxi [1 ]
Li, Shunfeng [1 ]
Wang, Qiming [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1999年 / 20卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：723 / 727
相关论文
共 50 条
  • [21] Vibrational properties of cubic AlxGa1-xN and InxGa1-xN ternary alloys
    Santos, AM
    Silva, ECF
    Noriega, OC
    Alves, HWL
    Alves, JLA
    Leite, JR
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 232 (01): : 182 - 187
  • [22] Cathodoluminescence study in AlxGa1-xN structures
    Ben Nasr, F.
    Matoussi, A.
    Guermazi, S.
    Fakhfakh, Z.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2008, 28 (5-6): : 618 - 622
  • [23] Doping of AlxGa1-xN
    Stampfl, C
    Van de Walle, CG
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 459 - 461
  • [24] AlN, GaN, AlxGa1-xN nanotubes and GaN/AlxGa1-xN nanotube heterojunctions
    de Almeida, James M.
    Kar, Tapas
    Piquini, Paulo
    PHYSICS LETTERS A, 2010, 374 (06) : 877 - 881
  • [25] Full calculations of field emission from AlxGa1-xN
    Seo, HS
    Chung, MS
    Yoon, BG
    KORUS 2003: 7TH KOREA-RUSSIA INTERNATIONAL SYMPOSIUM ON SCIENCE AND TECHNOLOGY, VOL 3, PROCEEDINGS: NATURAL SCIENCE, 2003, : 246 - 252
  • [26] Time-resolved photoluminescence studies of AlxGa1-xN alloys
    Kim, HS
    Mair, RA
    Li, J
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2000, 76 (10) : 1252 - 1254
  • [27] Effects of stoichiometry on the field emission from AlxGa1-xN
    Seo, HS
    Chung, MS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (04) : 708 - 712
  • [28] Photoluminescence properties of in situ Tm-doped AlxGa1-xN
    Hömmerich, U
    Nyein, EE
    Lee, DS
    Steckl, AJ
    Zavada, JM
    APPLIED PHYSICS LETTERS, 2003, 83 (22) : 4556 - 4558
  • [29] Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1-xN
    Glinka, Yuri D.
    Foreman, John V.
    Everitt, Henry O.
    Lee, Don S.
    Steckl, Andrew J.
    Journal of Applied Physics, 2009, 105 (08):
  • [30] Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
    Xu, DP
    Yang, H
    Zhao, DG
    Li, JB
    Zheng, LX
    Wang, YT
    Li, SF
    Duan, LH
    Wu, RH
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) : 40 - 44
12345