Vibrational properties of cubic AlxGa1-xN and InxGa1-xN ternary alloys

被引:0
|
作者
Santos, AM
Silva, ECF
Noriega, OC
Alves, HWL
Alves, JLA
Leite, JR
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] FUNREI, Dept Ciencias Nat, BR-36300000 Sao Joao Del Rei, MG, Brazil
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 232卷 / 01期
关键词
D O I
10.1002/1521-3951(200207)232:1<182::AID-PSSB182>3.0.CO;2-Q
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The phonon dispersion curves and phonon density of states of the cubic AlxGa1-xN and InGa1-xN alloys were calculated within the framework of a valence force field method and an effective charge approach for the long-range Coulomb interaction. The valence-force parameters and effective charges for the cubic GaN, AlN and InN binary compounds were fitted to the phonon frequencies at high-symmetry points in the Brillouin zone measured by Raman spectroscopy an, calculated by ab initio methods. The scaling factor approximation was used to obtain the valence force parameters and effective charges for the alloys. A good agreement between our calculation and recent Raman data for the alloys is achieved.
引用
收藏
页码:182 / 187
页数:6
相关论文
共 50 条
  • [1] Calculated thermoelectric properties of InxGa1-xN, InxAl1-xN, and AlxGa1-xN
    Sztein, Alexander
    Haberstroh, John
    Bowers, John E.
    DenBaars, Steven P.
    Nakamura, Shuji
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)
  • [2] Ab initio calculation of structural and electronic properties of AlxGa1-xN and InxGa1-xN alloys
    Lopez-Apreza, E.
    Arriaga, J.
    Olguin, D.
    [J]. REVISTA MEXICANA DE FISICA, 2010, 56 (03) : 183 - 194
  • [3] Measurement of InxGa1-xN and AlxGa1-xN compositions by RBS and SIMS
    Gao, Y
    Kirchhoff, J
    Mitha, S
    Erickson, JW
    Huang, C
    ClarkPhelps, R
    [J]. GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 275 - 279
  • [4] First-principles calculations of the thermodynamic and structural properties of strained InxGa1-xN and AlxGa1-xN alloys
    Teles, LK
    Furthmüller, J
    Scolfaro, LMR
    Leite, JR
    Bechstedt, F
    [J]. PHYSICAL REVIEW B, 2000, 62 (04): : 2475 - 2485
  • [5] Complete characterization of AlxGa1-xN/InxGa1-xN/GaN devices by SIMS
    Huang, C
    Mitha, S
    Erickson, JW
    ClarkPhelps, R
    Sheng, J
    Gao, Y
    [J]. GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 281 - 285
  • [6] Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD
    Tagliente, MA
    Tapfer, L
    Waltereit, P
    Brandt, O
    Plogg, KH
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (10A) : A192 - A197
  • [7] First-principles calculation of the band gap of AlxGa1-xN and InxGa1-xN
    Nunez-Gonzalez, Roberto
    Reyes-Serrato, Armando
    Posada-Amarillas, Alvaro
    Galvan, Donald H.
    [J]. REVISTA MEXICANA DE FISICA, 2008, 54 (02) : 111 - 118
  • [8] Thermodynamics and nucleation kinetics of AlxGa1-xN/GaN and InxGa1-xN/GaN heterostructures
    Varadarajan, E
    Dhanasekaran, R
    Ramasamy, P
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) : 141 - 144
  • [9] First-principles calculation of structural and electronic properties of wurtzite AlxGa1-xN, InxGa1-xN, and InxAl1-xN random alloys
    Dridi, Z
    Bouhafs, B
    Ruterana, P
    [J]. INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 315 - 319
  • [10] Numerical analysis of InxGa1-xN/SnS and AlxGa1-xN/SnS heterojunction solar cells
    Lin, Shuo
    Li, Xirong
    Pan, Huaqing
    Chen, Huanting
    Li, Xiuyan
    Li, Yan
    Zhou, Jinrong
    [J]. ENERGY CONVERSION AND MANAGEMENT, 2016, 119 : 361 - 367