Investigation of the Field in a p-n Junction and Base of Silicon Diodes Under Forward Bias.

被引：0
|
作者：
Matosov, M.V.
机构：
来源：
| 1972年 / 15卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
In Russian.
引用
收藏
页码：1378 / 1380
相关论文
共 50 条
  • [41] Investigation of the photovoltaic performance of the polycrystalline silicon p-n junction by a photothermal measurement
    Fukuyama, Atsuhiko
    Ishibashi, Daisuke
    Sato, Yohei
    Sakai, Kentaro
    Suzuki, Hidetoshi
    Nishioka, Kensuke
    Ikari, Tetsuo
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (17) : 2206 - 2208
  • [42] ON MECHANISM OF LITHIUM ION DRIFT IN ELECTRICAL FIELD OF A P-N JUNCTION IN SILICON
    ANTONOV, AS
    PHYSICA STATUS SOLIDI, 1966, 16 (02): : 761 - &
  • [43] CHANGE IN WIDTH OF FORBIDDEN BAND OF SILICON IN ELECTRIC FIELD OF A P-N JUNCTION
    BRITSYN, KI
    SMIRNOV, AA
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 126 - +
  • [44] EXTRACTION OF CARRIERS BY A P-N JUNCTION FIELD AND ELECTROLUMINESCENCE MECHANISM OF SILICON CARBIDE
    VIOLIN, EE
    KHOLUYAN.GF
    SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2716 - +
  • [45] Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes
    Poyai, A
    Simoen, E
    Claeys, C
    Czerwinski, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 191 - 196
  • [46] p-n junction leakage in neutron-irradiated diodes fabricated in various silicon substrates
    Czerwinski, A
    Simoen, E
    Poyai, A
    Claeys, C
    Ohyama, H
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 447 - 452
  • [47] Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p-n junction diodes
    Nagasawa, Fumiya
    Takamura, Makoto
    Sekiguchi, Hiroshi
    Miyamae, Yoshinori
    Oku, Yoshiaki
    Nakahara, Ken
    SCIENTIFIC REPORTS, 2021, 11 (01)
  • [48] Electrical treeing and luminescence in a polymer p-n junction under extreme reverse bias
    Wang, Dongze
    Gao, Jun
    OPTICAL MATERIALS, 2023, 137
  • [49] DEPENDENCE OF RECOMBINATION-GENERATION CURRENT AND INJECTION COEFFICIENT OF A P-N JUNCTION ON FORWARD BIAS VOLTAGE
    AGAKHANY.TM
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (02): : 240 - +
  • [50] On the tensosensitivity of a p-n junction under illumination
    G. Gulyamov
    A. G. Gulyamov
    Semiconductors, 2015, 49 : 819 - 822
12345