Investigation of the Field in a p-n Junction and Base of Silicon Diodes Under Forward Bias.

被引：0
|
作者：
Matosov, M.V.
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来源：
| 1972年 / 15卷 / 11期
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D O I：
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
In Russian.
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页码：1378 / 1380
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