Ultra-thin oxynitride gate dielectrics for 0.18 μm CMOS and beyond

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作者：
Takayanagi, Mariko [1 ]
Toyoshima, Yoshiaki [1 ]
机构：
[1] Toshiba Corp, Yokohama, Japan
来源：
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 1999年
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