Reducing the effects of aberrations with phase-shift masks and optimized resists

被引:0
|
作者
Schenker, Richard [1 ]
机构
[1] Intel Corp, Hillsboro, United States
来源
Microlithography World | 2000年 / 9卷 / 02期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Masks
引用
收藏
相关论文
共 50 条
  • [41] EFFECT OF ABERRATIONS AND PHASE-SHIFT ON CONTRAST REVERSAL IN THE PRESENCE OF PHASE-CONTRAST IMAGE DEFOCUSINGS
    GERLOVIN, BY
    SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1985, 52 (10): : 591 - 594
  • [42] Optimized Squeezing Operation for Phase-Shift Keying Quantum State Discrimination
    Bhadani, Rahul
    Djordjevic, Ivan B.
    IEEE ACCESS, 2022, 10 : 63383 - 63393
  • [43] OPTIMIZED POLYNOMIAL-EXPANSIONS - POTENTIALS AND PP PHASE-SHIFT ANALYSES
    MARKER, D
    RIJKEN, T
    BOHANNON, G
    SIGNELL, P
    PHYSICAL REVIEW C, 1982, 25 (06): : 2914 - 2920
  • [44] NEW PHASE-SHIFT PARAMETRIZATION BASED ON A PHASE-SHIFT DISPERSION RELATION
    COULTER, PW
    PHYSICAL REVIEW, 1968, 167 (05): : 1352 - &
  • [45] Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks
    Iwasaki, H
    Ishida, S
    Hashimoto, T
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 : 384 - 395
  • [46] Application of attenuated phase-shift masks to sub-0.18 μm logic patterns
    Fritze, M
    Wyatt, PW
    Astolfi, D
    Davis, P
    Curtis, A
    Preble, D
    Cann, S
    Denault, S
    Chan, D
    Shaw, J
    Sullivan, N
    Brandom, R
    Mastovich, M
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1179 - +
  • [47] Infrared frequency selective surfaces fabricated using optical lithography and phase-shift masks
    Spector, SJ
    Astolfi, DK
    Doran, SP
    Lyszczarz, TM
    Raynolds, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2757 - 2760
  • [48] Chromeless phase-shift masks used for sub-100nm SOICMOS transistors
    Fritze, M
    Astolfi, DK
    Yost, DRW
    Wyatt, PW
    Liu, HY
    Forte, T
    Davis, P
    Curtis, A
    Preble, D
    Cann, S
    Denault, S
    Shaw, J
    Sullivan, N
    Brandom, R
    Mastovich, M
    SOLID STATE TECHNOLOGY, 2000, 43 (07) : 116 - +
  • [49] Modeling high-efficiency extreme ultraviolet etched multilayer phase-shift masks
    Sherwin, Stuart
    Neureuther, Andrew
    Naulleau, Patrick
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2017, 16 (04):
  • [50] ArF excimer laser exposure durability of chromium fluoride attenuated phase-shift masks
    Seki, Y
    Ushioda, J
    Saito, T
    Maeda, K
    Nakano, K
    Iwasa, S
    Ohfuji, T
    Tanabe, H
    PHOTOMASK AND X-RAY MASK TECHNOLOGY IV, 1997, 3096 : 286 - 293