ELECTRON IRRADIATION DAMAGE IN RADIATION-RESISTANT InP SOLAR CELLS.

被引：0
|
作者：
Yamaguchi, Masafumi
Uemura, Chikao
Yamamoto, Akio
Shibukawa, Atsushi
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1984年 / 23卷 / 03期
关键词：
ELECTRONS - Radiation Effects - SEMICONDUCTING INDIUM COMPOUNDS;
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摘要：
It is shown that InP solar cell is more radiation-resistant than Si and GaAs solar cells. 1 Mev electron irradiation damage is examined in InP solar cells with AM 1. 5 conversion efficiencies exceeding 16. 5%. Minority carrier diffusion length and carrier concentration studies are carried out for defects induced by 1 Mev electron irradiation in InP solar cells, and the correlation between the measured defect parameters and the performance characteristics of the electron-irradiated InP solar cells is elucidated. InP solar cells with higher carrier concentration substrate are found to be more radiation resistant, due to the superior radiation-resistance for the high carrier concentration InP substrate.
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页码：302 / 307
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