Radiation-resistant and high-efficiency InGaP/InGaAs/Ge 3-junction solar cells

被引：0
|
作者：
Yamaguchi, M [1 ]
Kojima, N [1 ]
Khan, A [1 ]
Takamoto, T [1 ]
Ando, K [1 ]
Imaizumi, M [1 ]
Sumita, T [1 ]
机构：
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源：
2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/ISCSPC.2003.1354456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, radiation-resistant and high-efficiency III-V compound multi-junction (MJ) solar cells are presented. We have proposed wide-bandgap InGaP double hetero (DH) structure tunnel junction for cell interconnection and lattice-matched InGaAs middle cell. A world-record efficiency of 29.2% (AMO, 28degreesC) has been obtained for InGaP/InGaAs/Ge 3-junction solar cells (2x2cm 2) fabricated by the MOCVD method. Furthermore, radiation effects on multi-junction solar cells have been studied for space applications. The authors have found superior radiation-resistance of InGaP-based MJ-cells and minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP and InGaAsP sub cell materials in addition to those of InP cell materials found previously. We are now demonstrating effectiveness InGaP-based MJ-cells using the MDS-1 satellite launched on February 4, 2002.
引用
收藏
页码：210 / 213
页数：4
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