Radiation-resistant and high-efficiency InGaP/InGaAs/Ge 3-junction solar cells

被引：0

作者：

Yamaguchi, M ^{[1
]}

Kojima, N ^{[1
]}

Khan, A ^{[1
]}

Takamoto, T ^{[1
]}

Ando, K ^{[1
]}

Imaizumi, M ^{[1
]}

Sumita, T ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ISCSPC.2003.1354456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, radiation-resistant and high-efficiency III-V compound multi-junction (MJ) solar cells are presented. We have proposed wide-bandgap InGaP double hetero (DH) structure tunnel junction for cell interconnection and lattice-matched InGaAs middle cell. A world-record efficiency of 29.2% (AMO, 28degreesC) has been obtained for InGaP/InGaAs/Ge 3-junction solar cells (2x2cm 2) fabricated by the MOCVD method. Furthermore, radiation effects on multi-junction solar cells have been studied for space applications. The authors have found superior radiation-resistance of InGaP-based MJ-cells and minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP and InGaAsP sub cell materials in addition to those of InP cell materials found previously. We are now demonstrating effectiveness InGaP-based MJ-cells using the MDS-1 satellite launched on February 4, 2002.

引用

页码：210 / 213

页数：4

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