共 50 条
- [31] Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities 2006 1ST IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3, 2006, : 470 - 474
- [32] Size effects on the electrical activation of low-energy implanted B in Si JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (01): : 468 - 472
- [33] BORON DOPING EFFECTS IN LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L513 - L515
- [34] On the solid-phase epitaxy of the a-Si:B/c-Si interface EUROPHYSICS LETTERS, 2003, 62 (06): : 862 - 868
- [35] BORON DOPING EFECTS IN LATERAL SOLID PHASE EPITAXY OF AMORPHOUS Si FILMS. Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (07): : 513 - 515
- [36] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS UNDER ULTRAHIGH PRESSURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 308 - 311
- [40] Si SURFACE CLEANING BY Si2H6-H2 GAS ETCHING AND ITS EFFECTS ON SOLID-PHASE EPITAXY. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (11): : 1816 - 1822