共 50 条
- [22] FABRICATION OF Si-GATE MOSFET'S ON A SILICON-ON-INSULATOR FORMED BY LATERAL SOLID PHASE EPITAXY. IEEE Transactions on Electron Devices, 1986, ED-33 (11):
- [24] EFFECT OF RAPID SOLID-PHASE EPITAXY OF P+-IMPLANTED AMORPHOUS GAAS AND GAAS/SI BY LASER-BEAM HEATING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (05): : L734 - L737
- [25] Boron ripening during solid-phase epitaxy of amorphous silicon PHYSICAL REVIEW B, 2004, 69 (04):
- [26] Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions Semiconductors, 2000, 34 : 87 - 91
- [29] Electrical activation of B+-ions implanted into 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 697 - 700
- [30] LATERAL SOLID-PHASE EPITAXY OF VACUUM-DEPOSITED AMORPHOUS SI FILM OVER RECESSED SIO2 PATTERNS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (05): : L352 - L354