Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga+In) source

被引：0

作者：

Chu, Shucheng ^{[1
]}

Saisho, Tetsuhiro ^{[1
]}

Fujimura, Kazuo ^{[2
]}

Sakakibara, Shingo ^{[3
]}

Tanoue, Fumiyasu ^{[3
]}

Ishino, Kenei ^{[1
]}

Ishida, Akihiro ^{[1
]}

Harima, Hiroshi ^{[4
]}

Oka, Yasuo ^{[5
]}

Takahiro, Katsumi ^{[6
]}

Chen, Yefan ^{[6
]}

Yao, Takafumi ^{[6
]}

Fujiyasu, Hiroshi ^{[1
]}

机构：

[1] Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan

[2] Susuki Corporation, Miyakoda Electronics Tech. Center, 1-1-2 Shinmiyakoda, Hamamatsu 431, Japan

[3] Yamaha Corporation, Iwata-gun, Shizuoka 438, Japan

[4] Department of Applied Physics, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan

[5] Res. Inst. for Sci. Measurements, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

[6] Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：4973 / 4979

共 50 条

[1] Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga plus In) source
Chu, S
Saisho, T
Fujimura, K
Sakakibara, S
Tanoue, F
Ishino, K
Ishida, A
Harima, H
Oka, Y
Takahiro, K
Chen, YF
Yao, T
Fujiyasu, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (9A): : 4973 - 4979
[2] High-quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source
Chu, Shucheng
Saisho, Tetsuhiro
Fujimura, Kazuo
Sakakibara, Shingo
Tanoue, Fumiyasu
Ishino, Kenei
Ishida, Akihiro
Harima, Hiroshi
Chen, Yefan
Yao, Takafumi
Fujiyasu, Hiroshi
Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (4 B):
[3] Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source
Iwata, Futoshi
Chu, Shucheng
Sasaki, Akira
Ishino, Kenji
Ishida, Akihiro
Fujiyasu, Hiroshi
1670, American Institute of Physics Inc. (88)
[4] Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source
Iwata, Futoshi
Chu, Shucheng
Sasaki, Akira
Ishino, Kenji
Ishida, Akihiro
Fujiyasu, Hiroshi
Journal of Applied Physics, 2000, 88 (03)
[5] High-quality InGaN films grown by hot-wall epitaxy with mixed (Ga plus In) source
Chu, SC
Saisho, T
Fujimura, K
Sakakibara, S
Tanoue, F
Ishino, K
Ishida, A
Harima, H
Chen, YF
Yao, T
Fujiyasu, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (4B): : L427 - L429
[6] Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga plus In) source
Iwata, F
Chu, SC
Sasaki, A
Ishino, K
Ishida, A
Fujiyasu, H
JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) : 1670 - 1673
[7] GROWTH AND CHARACTERIZATION OF PBTE EPITAXIAL-FILMS GROWN BY HOT-WALL EPITAXY
CLEMENS, H
FANTNER, EJ
RUHS, W
BAUER, G
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 251 - 256
[8] EPITAXIAL-GROWTH OF CADMIUM FILMS BY THE HOT-WALL TECHNIQUE
KULKARNI, AV
BOSE, S
PRATAP, R
THIN SOLID FILMS, 1984, 120 (01) : L73 - L77
[9] Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
Gogova, Daniela
Ghezellou, Misagh
Tran, Dat Q.
Richter, Steffen
Papamichail, Alexis
ul Hassan, Jawad
Persson, Axel R.
Persson, Per O. a.
Kordina, Olof
Monemar, Bo
Hilfiker, Matthew
Schubert, Mathias
Paskov, Plamen P.
Darakchieva, Vanya
AIP ADVANCES, 2022, 12 (05)
[10] CHARACTERIZATION OF EPITAXIAL-FILMS OF CDTE AND CDS GROWN BY HOT-WALL EPITAXY
SITTER, H
HUMENBERGER, J
HUBER, W
LOPEZOTERO, A
SOLAR ENERGY MATERIALS, 1983, 9 (02): : 199 - 206

← 1 2 3 4 5 →