Growth of epitaxial β-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples

被引:0
|
作者
Kyllesbech, Larsen, K.
Tavares, J.
Bender, H.
Donaton, R.A.
Lauwers, A.
Maex, K.
机构
来源
Journal of Applied Physics | 1995年 / 78卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Epitaxial growth of (100)-oriented β-FeSi2 film on 3C-SiC(100) plane
    Akiyama, Kensuke
    Kadowaki, Teiko
    Hirabayashi, Yasuo
    Yoshimoto, Mamoru
    Funakubo, Hiroshi
    Kaneko, Satoru
    JOURNAL OF CRYSTAL GROWTH, 2011, 316 (01) : 10 - 14
  • [22] Growth process of β-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy
    Ji, S. Y.
    Wang, J. F.
    Lim, J. -W.
    Isshiki, M.
    APPLIED SURFACE SCIENCE, 2006, 253 (02) : 444 - 448
  • [23] A NEW METASTABLE EPITAXIAL SILICIDE - FESI2/SI(111)
    DEPARGA, ALV
    DELAFIGUERA, J
    OCAL, C
    MIRANDA, R
    ULTRAMICROSCOPY, 1992, 42 : 845 - 850
  • [24] Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxy
    Murase, S.
    Sunohara, T.
    Suemasu, T.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 676 - 679
  • [25] β-FeSi2 and Schottky barrier at Fe/Si interface
    Lal, Chhagan
    Dhunna, Renu
    Dhaka, R. S.
    Barman, S. R.
    Jain, I. P.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (02): : 177 - 183
  • [26] Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers
    Liu, ZX
    Suzuki, Y
    Osamura, M
    Ootsuka, T
    Mise, T
    Kuroda, R
    Tanoue, H
    Makita, Y
    Wang, S
    Fukuzawa, Y
    Otogawa, N
    Nakayama, Y
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) : 4019 - 4024
  • [27] Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface
    Tarasov, I. A.
    Visotin, M. A.
    Aleksandrovsky, A. S.
    Kosyrev, N. N.
    Yakovlev, I. A.
    Molokeev, M. S.
    Lukyanenko, A. V.
    Krylov, A. S.
    Fedorov, A. S.
    Varnakov, S. N.
    Ovchinnikov, S. G.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2017, 440 : 144 - 152
  • [28] EFFECTS OF FE AND FESI2 ON NITRIDING OF SI POWDER
    FATE, WA
    MILBERG, ME
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (11-1) : 531 - 532
  • [29] Substrate rotation effects on β-FeSi2 epitaxial film growth using MBE
    Ji, S. Y.
    Lim, J. -W.
    Wang, J. F.
    Saitou, S.
    Mimura, K.
    Lalev, G. M.
    Isshiki, M.
    VACUUM, 2006, 81 (03) : 353 - 359
  • [30] Fabrication of β-FeSi2 Films on Si(111) Using Solid-Phase Growth Reaction from Fe and FeSi Sources
    Momiyama, Katsuaki
    Kanomata, Kensaku
    Kubota, Shigeru
    Hirose, Fumihiko
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (05): : 690 - 693