共 50 条
- [21] ELECTRON PARAMAGNETIC RESONANCE OF MANGANESE IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1568 - +
- [22] INVESTIGATION OF THE NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM ARSENIDE. [J]. 1977, 11 (08): : 858 - 860
- [23] ELECTRON PARAMAGNETIC RESONANCE OF IRON IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1963, 132 (01): : 195 - &
- [24] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM ARSENIDE. [J]. Soviet physics. Semiconductors, 1984, 18 (08): : 854 - 856
- [26] FAR-INFRARED MAGNETO-DYNAMICS OF PHOTOEXCITED ELECTRON SYSTEM IN GALLIUM ARSENIDE. [J]. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 131 - 133
- [27] BROADBAND MONOLITHIC INTEGRATED POWER AMPLIFIERS IN GALLIUM ARSENIDE. [J]. Microwave journal, 1982, 25 (11): : 87 - 94
- [28] Structural Inhomogeneities of Anodic Oxide Films on Gallium Arsenide. [J]. Neorganiceskie materialy, 1981, 17 (05): : 769 - 774
- [29] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE. [J]. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
- [30] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE. [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529