InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarization

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作者：
Takahashi, M. [1 ]
Vaccaro, P. [1 ]
Fujita, K. [1 ]
Watanabe, T. [1 ]
Mukaihara, T. [1 ]
Koyama, F. [1 ]
Iga, K. [1 ]
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[1] ATR Optical and Radio Communications, Research Lab, Kyoto, Japan
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| / IEEE, Piscataway, NJ, United States卷 / 08期
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