Kinetic analysis of the growth of polycrystalline silicon from silane, using a rod-substrate CVD reactor

被引:0
|
作者
Hashimoto, K. [1 ]
Miura, K. [1 ]
Masuda, T. [1 ]
Toma, M. [1 ]
Sawai, H. [1 ]
Kawase, M. [1 ]
机构
[1] Kyoto Univ, Kyoto, Japan
来源
International chemical engineering | 1992年 / 32卷 / 02期
关键词
Silanes;
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中图分类号
学科分类号
摘要
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页码:360 / 369
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