Kinetic analysis of the growth of polycrystalline silicon from silane, using a rod-substrate CVD reactor

被引：0
|
作者：
Hashimoto, K. [1 ]
Miura, K. [1 ]
Masuda, T. [1 ]
Toma, M. [1 ]
Sawai, H. [1 ]
Kawase, M. [1 ]
机构：
[1] Kyoto Univ, Kyoto, Japan
来源：
International chemical engineering | 1992年 / 32卷 / 02期
关键词：
Silanes;
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学科分类号：
摘要：
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页码：360 / 369
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