Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctions

被引：0
|
作者：
Univ of Pennsylvania, Philadelphia, United States [1 ]
机构：
来源：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 1996年 / 14卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1607 / 1610
相关论文
共 50 条
  • [21] Cross-sectional thermal imaging of a metal-oxide-semiconductor field-effect transistor
    Kwon, O
    Majumdar, A
    MICROSCALE THERMOPHYSICAL ENGINEERING, 2003, 7 (04): : 349 - 354
  • [22] Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
    Wang Wei
    Huang Bei-Ju
    Dong Zan
    Chen Hong-Da
    CHINESE PHYSICS B, 2011, 20 (01)
  • [23] Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures
    Pokatilov, EP
    Fomin, VM
    Balaban, SN
    Gladilin, VN
    Klimin, SN
    Devreese, JT
    Magnus, W
    Schoenmaker, W
    Collaert, N
    Van Rossum, M
    De Meyer, K
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6625 - 6631
  • [24] Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures
    Departamentul de Fizica Teoretica, Universitatea de Stat din Moldova, strada Mateevici 60, MD-2009 ChişinǍu, Moldova
    不详
    不详
    不详
    不详
    不详
    不详
    J Appl Phys, 9 (6625-6631):
  • [25] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF ELECTRODEPOSITED METAL-OXIDE SUPERLATTICES
    GOLDEN, TD
    RAFFAELLE, RP
    SWITZER, JA
    APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1501 - 1503
  • [26] Cross-Sectional Scanning Tunneling Microscopy for Complex Oxide Interfaces
    Chien, TeYu
    Guisinger, Nathan P.
    Freeland, John W.
    OXIDE-BASED MATERIALS AND DEVICES II, 2011, 7940
  • [27] CROSS-SECTIONAL ANALYSIS OF SILICON METAL-OXIDE SEMICONDUCTOR-DEVICES USING THE SCANNING ELECTRON-MICROSCOPE
    KOELLEN, DS
    SAXON, DI
    WENDEL, KE
    SCANNING ELECTRON MICROSCOPY, 1985, : 43 - 53
  • [28] High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy
    Modesti, S
    Furlanetto, D
    Piccin, M
    Rubini, S
    Franciosi, A
    APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1932 - 1934
  • [29] Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal-oxide-semiconductor devices
    Salace, G
    Petit, C
    Vuillaume, D
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) : 5896 - 5901
  • [30] Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures
    Pu, Y.
    Odenthal, P. M.
    Adur, R.
    Beardsley, J.
    Swartz, A. G.
    Pelekhov, D. V.
    Flatte, M. E.
    Kawakami, R. K.
    Pelz, J.
    Hammel, P. C.
    Johnston-Halperin, E.
    PHYSICAL REVIEW LETTERS, 2015, 115 (24)
12345