Cross-Sectional Scanning Tunneling Microscopy for Complex Oxide Interfaces

被引:3
|
作者
Chien, TeYu [1 ]
Guisinger, Nathan P.
Freeland, John W. [1 ]
机构
[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
来源
关键词
scanning tunneling microscopy; complex oxides; interface; cross-sectional; heterostructure; FERROELECTRICITY; RECONSTRUCTION; SURFACE; INSULATOR; MAGNETISM;
D O I
10.1117/12.879329
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cross-sectional scanning tunneling microscopy (XSTM) is developed for studying the interfaces of the complex oxide heterostructures. Since most of the complex oxide materials have a perovskite structure, which does not have cleavage plane, it posed an experimental challenge for utilizing STM on the fractured surfaces. A well-controlled method for fracturing non-cleavable materials was developed by using the common subtrate: Nb-doped SrTiO3 (Nb:STO). Through systematically studies on the control of the fracturing conditions, on the tip-sample interactions and on the resulting fractured surfaces of Nb:STO, atomic flat terraces are routinely created and stable measurements are achieved. By harnessing the well-controlled fracturing method and the well-controlled tip conditions to a thin film system, La2/3Ca1/3MnO3/Nb:STO (LCMO/Nb:STO), XSTM as well as the ability of cross-sectional scanning tunneling spectroscopy (XSTS) directly revealed the band diagram mapping across the interface. The novel developed, well-controlled XSTM/S for the interfaces of complex oxide heterostructures opened a door for accurate determination of local electronic properties across and at the interface.
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页数:8
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