Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors

被引:0
|
作者
机构
[1] Kuriyama, Hiroyuki
[2] Nohda, Tomoyuki
[3] Aya, Yoichirou
[4] Kuwahara, Takashi
[5] Wakisaka, Kenichiro
[6] Kiyama, Seiichi
[7] Tsuda, Shinya
来源
Kuriyama, Hiroyuki | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词
Grain growth;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Differentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin film transistors
    Armstrong, GA
    Uppal, S
    Brotherton, SD
    Ayres, JR
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1721 - 1726
  • [32] Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs
    Jin, Seonghyun
    Choe, Younwoo
    Lee, Suhui
    Kim, Tae-Woong
    Mativenga, Mallory
    Jang, Jin
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) : 291 - 294
  • [33] Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
    Choi, YW
    Lee, JN
    Jang, TW
    Ahn, BT
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (01) : 2 - 4
  • [34] ADVANCED EXCIMER LASER ANNEALING OF THIN POLY SI FILMS AFTER SOLID-PHASE GRAIN-GROWTH
    NOGUCHI, T
    TAJIMA, K
    MORITA, Y
    RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 35 - 40
  • [35] BOTTOM-GATE POLY-SI THIN-FILM TRANSISTORS USING XECL EXCIMER-LASER ANNEALING AND ION DOPING TECHNIQUES
    FURUTA, M
    KAWAMURA, T
    YOSHIOKA, T
    MIYATA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 1964 - 1969
  • [36] A simple lateral grain growth of poly-Si by single excimer laser crystallization of amorphous silicon film deposited on polygon shaped trench
    Jung, SH
    Kang, SH
    Shin, HS
    Han, MK
    AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 : 741 - 746
  • [37] High-performance poly-Si thin film transistors crystallized by excimer laser irradiation with a-Si spacer structure
    Chang, TK
    Lin, CW
    Tsai, CC
    Lu, JH
    Chen, BT
    Cheng, HC
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (01) : G14 - G16
  • [38] New excimer laser recrystallization of poly-Si for effective grain growth and grain boundary arrangement
    Jeon, JH
    Lee, MC
    Park, KC
    Han, MK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2012 - 2014
  • [39] New excimer laser recrystallization of poly-Si for effective grain growth and grain boundary arrangement
    Jeon, Jae-Hong
    Lee, Min-Cheol
    Park, Kee-Chan
    Han, Min-Koo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 2012 - 2014
  • [40] Improved AMOLED with aligned poly-Si thin-film transistors by laser annealing and chemical solution treatments
    Wu, G. M.
    Chen, C. N.
    Feng, W. S.
    Lu, H. C.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4649 - 4652