共 50 条
- [24] Design of optical channel waveguides in SiO2 by ion implantation NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES XII, 2015, 9556
- [25] Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (05): : 2425 - 2432
- [28] VARIATIONS IN THERMAL SIO2 AND BURIED SIO2 FORMED BY OXYGEN IMPLANTATION REVEALED BY CHEMICAL ETCH RATES IN HF SOLUTIONS AS A FUNCTION OF THICKNESS MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 205 - 208
- [29] Realistic etch yield of fluorocarbon ions in SiO2 etch process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7B): : 4465 - 4472
- [30] Realistic etch yield of fluorocarbon ions in SiO2 etch process Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (7 B): : 4465 - 4472