SYNTHESIS OF MON AND RUN BY ACTIVE NITROGEN SPUTTERING.

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作者
Ihara, H. [1 ]
Terada, N. [1 ]
Senzaki, K. [1 ]
Hirabayashi, M. [1 ]
Kimura, Y. [1 ]
Uzuka, R. [1 ]
Kawashima, F. [1 ]
Akimoto, M. [1 ]
Kezuka, H. [1 ]
机构
[1] Electrotechnical Lab, Niihari-gun, Jpn, Electrotechnical Lab, Niihari-gun, Jpn
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MOLYBDENUM COMPOUNDS - Synthesis - RUBIDIUM COMPOUNDS - Synthesis;
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摘要
MoN films with B1 and hexagonal phases were prepared by active nitrogen sputtering. Films with high-superconducting transition temperatures (T//c 14 K) were synthesized using NO sputtering gas, which favors the production of active nitrogen atoms. The T//c of B1 and hexagonal mixed-phase films was higher than that of either of the single phase films. RuN//x films consisting of B1-like RuN and hexagonal Ru had T//c of 9. 1 K. High-pressure-annealed films attained the highest T//c 16. 4 K, of all the films in the MoN system for both B1 and hexagonal mixed-phase. The highest T//c for the Ru-N films (high-pressure-annealed) was 10. 1 K.
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