HOT-CARRIER DRIFTS IN SUBMICROMETER P-CHANNEL MOSFET'S.

被引：0
|
作者：
Weber, W. [1 ]
Lau, F. [1 ]
机构：
[1] Siemens AG, Munich, West Ger, Siemens AG, Munich, West Ger
来源：
Electron device letters | 1987年 / EDL-8卷 / 05期
关键词：
Manuscript received December 18; 1986; revised February 19; 1987. This work was supported by the Federal Department of Research and Technology of the Federal Republic of Germany. The authors are with Corporate Research and Development; Microelectronics; Siemens AG; 8000; Munich; 83; Germany. IEEE Log Number 8714475;
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摘要：
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页码：208 / 210
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