Simulation of charge pumping current in hot-carrier degraded P-MOSFET's

被引：1

作者：

Samudra, GS ^{[1
]}

Yip, A ^{[1
]}

See, LK ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Signal Proc & VLSI Design Lab, Singapore 119260, Singapore

来源：

ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/SMELEC.1998.781145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge pumping is a widely used method of evaluating the Si/SiO2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. Two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are also substantiated with the measurement results.

引用

页码：32 / 36

页数：5

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