Simulation of charge pumping current in hot-carrier degraded P-MOSFET's

被引：1

作者：

Samudra, GS ^{[1
]}

Yip, A ^{[1
]}

See, LK ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Signal Proc & VLSI Design Lab, Singapore 119260, Singapore

来源：

ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/SMELEC.1998.781145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge pumping is a widely used method of evaluating the Si/SiO2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. Two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are also substantiated with the measurement results.

引用

页码：32 / 36

页数：5

共 50 条

[21] Effect of mobile charge on hot-carrier degradation in lateral diffused MOSFET
Wei, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (04) : 554 - 559
[22] MODELING OF SUBSTRATE CURRENT IN P-MOSFET'S.
Ong, T.-C.
Ko, P.K.
Hu, Chenming
Electron device letters, 1987, EDL-8 (09): : 413 - 416
[23] Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS
钱钦松
刘斯扬
孙伟锋
时龙兴
半导体学报, 2009, 30 (10) : 46 - 50
[24] Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS
Qian Qinsong
Liu Siyang
Sun Weifeng
Shi Longxing
JOURNAL OF SEMICONDUCTORS, 2009, 30 (10)
[25] ON/OFF current ratio in P-channel poly-Si MOSFET's: Dependence on hot-carrier stress conditions
Rodder, Mark
Electron device letters, 1990, 11 (08): : 346 - 348
[26] Hot-carrier energy distribution model and its application to the MOSFET substrate current
Lee, CS
Jin, G
Lee, KH
Kong, JT
Lee, WS
Rho, YH
Kan, EC
Dutton, RW
SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, : 171 - 173
[27] Two dimensional computer simulation and analysis on hot-carrier degradation of submicron MOSFET
Zhang, Xisheng
He, Xinping
Li, Zhijian
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (03): : 148 - 153
[28] NBT-induced Hot carrier (HC) effect: Positive feedback mechanism in p-MOSFET's degradation
Aono, H
Murakami, E
Okuyama, K
Makabe, K
Kuroda, K
Watanabe, K
Ozaki, H
Yanagisawa, K
Kubota, K
Ohji, Y
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 79 - 85
[29] Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's
Mahapatra, S
Parikh, CD
Rao, VR
Viswanathan, CR
Vasi, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (04) : 789 - 796
[30] MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation
Ghetti, A
SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, : 231 - 234

← 1 2 3 4 5 →