Properties of silicide films formed by the low-energy implantation of metal ions into silicon

被引：0
|
作者：
Rysbaev, A.S.
Normuradov, M.T.
Nasridinov, S.S.
Adambaev, K.A.
机构：
来源：
Radiotekhnika i Elektronika | 1997年 / 41卷 / 01期
关键词：
Annealing - Ions - Semiconductor doping - Silicon - Silicon compounds - Thin films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The process of forming silicide films on silicon in the implantation of ions Ba+, Na+, Li+, Rb+ with energy 0.5 keV has been studied using the methods of electron spectroscopy and slow electron diffraction. the post-implantation annealing of the ion-implanted specimens at the temperature 700 K is shown to lead to the formation of new structures Si(111)-4×4Li, Si(100)-2×2Ba, Si(111)-2×2Rb. The obtained silicide films have high thermal sensitivity to 550 K.
引用
收藏
页码：125 / 128
相关论文
共 50 条
  • [41] NANOMETER STRUCTURES IN SEMICONDUCTORS FORMED BY LOW-ENERGY ION-IMPLANTATION
    SHANNON, JM
    CLEGG, JB
    VACUUM, 1984, 34 (1-2) : 193 - 197
  • [42] IMPLANTATION PROFILES OF LOW-ENERGY HELIUM IN SILICON CARBIDE.
    Miyagawa, Soji
    Ato, Yasuro
    Miyagawa, Yoshiko
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1984, 23 (10): : 1380 - 1384
  • [43] Low-energy BF2+ ion implantation in silicon
    Hirano, D
    Ishikawa, T
    Kitahara, M
    Inada, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 153 - 156
  • [44] Low-energy excitations in amorphous films of silicon and germanium
    Liu, X
    Pohl, RO
    PHYSICAL REVIEW B, 1998, 58 (14) : 9067 - 9081
  • [45] Origin of the low-energy photoluminescence in microcrystalline silicon films
    Lee, JY
    Park, DH
    Yoon, JH
    AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 : 93 - 98
  • [46] IMPLANTATION AND DEFECT PRODUCTION BY LOW-ENERGY LIGHT-IONS IN THIN-FILMS OF GOLD AND TUNGSTEN
    JUNG, P
    SOLTAN, AS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 118 (04): : 309 - 324
  • [47] Formation of thin surface films of Ni-, V- and Co-silicide by low-energy implantation with a metal vapour vacuum arc ion source
    Zhang, YW
    Whitlow, HJ
    Zhang, TH
    MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 499 - 506
  • [48] Formation of thin surface films of Ni-, V- and Co-silicide by low-energy implantation with a metal vapour vacuum arc ion source
    Lund Inst of Technology, Lund, Sweden
    Microelectron Eng, (499-506):
  • [49] SILICIDE FORMATION ON POLYCRYSTALLINE SILICON BY DIRECT METAL IMPLANTATION
    KOZICKI, MN
    ROBERTSON, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 878 - 881
  • [50] LOW-ENERGY ION-IMPLANTATION STUDIES OF POLYACETYLENE FILMS
    KOSHIDA, N
    SUZUKI, Y
    AOYAMA, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 708 - 711
12345