Properties of silicide films formed by the low-energy implantation of metal ions into silicon

被引：0
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作者：
Rysbaev, A.S.
Normuradov, M.T.
Nasridinov, S.S.
Adambaev, K.A.
机构：
来源：
Radiotekhnika i Elektronika | 1997年 / 41卷 / 01期
关键词：
Annealing - Ions - Semiconductor doping - Silicon - Silicon compounds - Thin films;
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摘要：
The process of forming silicide films on silicon in the implantation of ions Ba+, Na+, Li+, Rb+ with energy 0.5 keV has been studied using the methods of electron spectroscopy and slow electron diffraction. the post-implantation annealing of the ion-implanted specimens at the temperature 700 K is shown to lead to the formation of new structures Si(111)-4×4Li, Si(100)-2×2Ba, Si(111)-2×2Rb. The obtained silicide films have high thermal sensitivity to 550 K.
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页码：125 / 128
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