Theoretical insights into CoSi2/CaF2 tunneling diodes

被引：0
|
作者：
Strahberger, C. [1 ]
Vogl, P. [1 ]
机构：
[1] Walter Schottky Inst. Tech. Univ. M., Am Coulombwall, 85748, Garching, Germany
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
关键词：
Band structure - Calcium compounds - Cobalt compounds - Electron resonance - Semiconducting silicon compounds - Semiconductor device models;
D O I：
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学科分类号：
摘要：
We performed multi-band-multi-channel transport calculations within the framework of empirical tight binding on triple barrier metal(CoSi2)/insulator(CaF2) resonant tunneling diodes. The incorporation of realistic band structures turned out to be important for an adequate description, since the peak transport occurs far from the Γ-point. The observed resonances are predicted to be relatively stable to well-thickness fluctuations, but depend sensitively on barrier.
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页码：160 / 162
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