METAL(COSI2)/INSULATOR(CAF2) RESONANT-TUNNELING DIODE

被引：35
|
作者：
SUEMASU, T
WATANABE, M
SUZUKI, J
KOHNO, Y
ASADA, M
SUZUKI, N
机构：
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1A期
关键词：
RESONANT TUNNELING DIODE; METAL-INSULATOR HETEROSTRUCTURE; CAF2; COSI2; PEAK-TO-VALLEY CURRENT RATIO; RESONANCE VOLTAGE; STRUCTURE DEPENDENCE;
D O I：
10.1143/JJAP.33.57
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Negative differential resistance (NDR) of nanometer-thick triple-barrier metal(CoSi2)/insulator(CaF2) resonant tunneling diode (RTD) and the structure dependence of its characteristics are demonstrated. The device consists of metal-insulator (M-I) heterostructures with two metallic (CoSi2) quantum wells and three insulator (CaF2) barriers grown on an n-Si(lll) substrate. A typical peak-to-valley current ratio (P/V ratio) obtained at 77 K was 2-3 and the largest P/V ratio was 25. A P/V ratio as high as 2 was obtained at 300 K. M-I RTDs with two quantum wells of various thicknesses were fabricated in order to investigate the dependence of resonance voltage on the thickness of the two quantum wells. Reasonable agreement was obtained between theory and experiment for this dependence.
引用
收藏
页码：57 / 65
页数：9
相关论文
共 50 条
  • [1] Metal (CoSi2) Insulator (CaF2) resonant tunneling diode
    Suemasu, Takashi, 1600, Publ by JJAP, Minato-ku, Japan (33):
  • [2] NEGATIVE DIFFERENTIAL RESISTANCE IN METAL (COSI2) INSULATOR (CAF2) RESONANT TUNNELING DIODE
    SUEMASU, T
    WATANABE, M
    MURATAKE, S
    ASADA, M
    SUZUKI, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2644 - 2644
  • [3] THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS
    SUEMASU, T
    KOHNO, Y
    SAITOH, W
    WATANABE, M
    ASADA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (12) : 2203 - 2210
  • [4] ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2) INSULATOR (CAF2) RESONANT TUNNELING DIODE
    SUEMASU, T
    WATANABE, M
    ASADA, M
    SUZUKI, N
    ELECTRONICS LETTERS, 1992, 28 (15) : 1432 - 1434
  • [5] NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2)/INSULATOR (CAF2) TRIPLE-BARRIER RESONANT TUNNELING DIODE
    WATANABE, M
    SUEMASU, T
    MURATAKE, S
    ASADA, M
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 300 - 302
  • [6] DIFFERENT CHARACTERISTICS OF METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING TRANSISTORS DEPENDING ON BASE QUANTUM-WELL LAYER
    SUEMASU, T
    KOHNO, Y
    SUZUKI, N
    WATANABE, M
    ASADA, M
    IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (09) : 1450 - 1454
  • [7] QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE
    SUEMASU, T
    KOHNO, Y
    SAITOH, W
    SUZUKI, N
    WATANABE, M
    ASADA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (12B): : L1762 - L1765
  • [8] Theoretical and measured characteristics of metal(CoSi2)-insulator(CaF2) resonant tunneling transistors and the influence of parasitic elements
    Suemasu, Takashi, 1600, IEEE, Piscataway, NJ, United States (42):
  • [9] Electronic structure of metal CoSi2/insulator CaF2 superlattice
    Akai, K
    Matsuura, M
    PHYSICAL REVIEW B, 1999, 60 (08): : 5561 - 5569
  • [10] Theoretical insights into CoSi2/CaF2 tunneling diodes
    Strahberger, C.
    Vogl, P.
    Physica B: Condensed Matter, 1999, 272 (01): : 160 - 162
12345