Theoretical insights into CoSi2/CaF2 tunneling diodes

被引：0

作者：

Strahberger, C. ^{[1
]}

Vogl, P. ^{[1
]}

机构：

[1] Walter Schottky Inst. Tech. Univ. M., Am Coulombwall, 85748, Garching, Germany

来源：

Physica B: Condensed Matter | 1999年 / 272卷 / 01期

关键词：

Band structure - Calcium compounds - Cobalt compounds - Electron resonance - Semiconducting silicon compounds - Semiconductor device models;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We performed multi-band-multi-channel transport calculations within the framework of empirical tight binding on triple barrier metal(CoSi2)/insulator(CaF2) resonant tunneling diodes. The incorporation of realistic band structures turned out to be important for an adequate description, since the peak transport occurs far from the Γ-point. The observed resonances are predicted to be relatively stable to well-thickness fluctuations, but depend sensitively on barrier.

引用

页码：160 / 162

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