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- [32] THE DEPENDENCE OF LAYER THICKNESS ON FINAL CELL VOLTAGE FOR ANODIC OXIDE-FILMS GROWN GALVANOSTATICALLY ON HG1-XCDXTE (X=0.02, 0.16, 0.20, 0.22, 0.34, 1.00) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (02): : K115 - K119
- [33] ATOMIC-SCALE STRUCTURES OF TOP AND BOTTOM HETEROINTERFACES IN GaAs-AlxGa1 - xAs (x equals 0. 2-1) QUANTUM WELLS PREPARED BY MOLECULAR BEAM EPITAXY WITH GROWTH INTERRUPTION. Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (02): : 155 - 158
- [36] OXIDATION BEHAVIOUR OF VANADIUM AT HIGH TEMPERATURES AT Po2 equals 1. 33 multiplied by 103 APPROXIMATELY 1. 33 multiplied by 104Pa AND THE COMPARISON WITH THOSE OBTAINED AT Po2 equals 0. 133 APPROXIMATELY 133 Pa. Nippon Kinzoku Gakkai-si, 1980, 44 (12): : 1384 - 1392