DEPENDENCE OF LAYER THICKNESS ON FINAL CELL VOLTAGE FOR ANODIC OXIDE FILMS GROWN GALVANOSTATICALLY ON Hg1 - xCdxTe (x equals 0. 02, 0. 16, 0. 20, 0. 22, 0. 34, 1. 00).

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作者：
Pfeffer, S. [1 ]
Schubert, B. [1 ]
机构：
[1] Humboldt Univ of Berlin, Berlin, East Ger, Humboldt Univ of Berlin, Berlin, East Ger
来源：
Physica Status Solidi (A) Applied Research | 1988年 / 105卷 / 02期
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