Photoconductivity of the Si(111)-7 × 7 and √3 × √3-Ag surfaces

被引：0
|
作者：
Jiang, Chun-Sheng [1 ]
Hasegawa, Shuji [1 ,2 ]
机构：
[1] Department of Physics, Sch. Sci., Univ. Tokyo, 7-3-1 H., Tokyo, Japan
[2] Core Res. Evolutional Sci. T., Japan Sci. Technol. Corp. (JST), K., Kawaguchi, Japan
来源：
Surface Science | 1999年 / 427-428卷
关键词：
Energy gap - Photons - Silicon wafers - Silver - Surface structure;
D O I：
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中图分类号：
学科分类号：
摘要：
The photoconductivity of a Si(111) wafer was found to strongly depend on the surface superstructures on it. Positive photoconductivities were measured on the clean 7 × 7 surface with photon energies larger than the band gap energy, which was attributed to the creation of excess electron-hole pairs in the bulk. On the √3 × √3-Ag surface, however, negative photoconductivities were measured with light of the same energy range. This phenomenon was qualitatively explained as a result of a reduction of the conduction electrons in a surface-state band, which was due to an enhanced recombination rate between the surface-state electrons and the excess holes created in the surface space-charge layer by illumination.
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页码：239 / 244
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