Growth of (√3 x √3)-Ag and (111) oriented Ag islands on Ge/Si(111) surfaces

被引:8
|
作者
Roy, A. [1 ]
Bhattacharjee, K. [2 ]
Dev, B. N. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India
[2] Inst Phys, Bhubaneswar 751005, Orissa, India
关键词
Epitaxial Ag islands on Ge/Si(111) surfaces; Reflection high energy electron diffraction; Ag-induced reconstruction of Ge/Si(111) surfaces; SCANNING-TUNNELING-MICROSCOPY; MOLECULAR-BEAM EPITAXY; ELECTRONIC-STRUCTURE; PHOTOELECTRON DIFFRACTION; SI(111)-(7X7) SURFACES; ROOM-TEMPERATURE; SI(001) SURFACE; LAYER; FILMS; RECONSTRUCTION;
D O I
10.1016/j.apsusc.2009.07.085
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 x 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 x 1) pattern. Ge as well as Ag deposition was carried out at 550 degrees C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (root 3 x root 3)-R30 degrees RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (root 3 x root 3)-R30 degrees structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:508 / 512
页数:5
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