MEASUREMENT OF MINORITY CARRIER LIFE TIME IN SOLAR GRADE CRYSTALLINE SEMICONDUCTOR MATERIALS.

被引：0
|
作者：
Shoji, Akira
Hayashi, Yutaka
机构：
来源：
Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory | 1987年 / 51卷 / 5-6期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
16
引用
收藏
页码：70 / 76
相关论文
共 50 条
  • [1] Minority Carrier Lifetime Measurement of Solar Cell
    Ranjan, Vikash
    Solanki, Chetan S.
    Lal, R. K.
    2ND NATIONAL WORKSHOP ON ADVANCED OPTOELECTRONIC MATERIALS AND DEVICES (AOMD-2008), 2008, : 299 - +
  • [2] MEASUREMENT OF MINORITY CARRIER LIFETIME IN SEMICONDUCTOR JUNCTION DIODES
    MCNEILL, DJ
    AMERICAN JOURNAL OF PHYSICS, 1967, 35 (03) : 282 - &
  • [3] Gettering improvements of minority-carrier lifetimes in solar grade silicon
    Osinniy, V.
    Larsen, A. Nylandsted
    Dahl, E. Hvidsten
    Enebakk, E.
    Soiland, A. -K.
    Tronstad, R.
    Safir, Y.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 101 : 123 - 130
  • [4] Measurement of the minority carrier diffusion length in thin wafers of semiconductor crystals
    Bolesov, IA
    Astakhov, VP
    Karpov, VV
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2003, 46 (02) : 225 - 227
  • [5] Measurement of the minority carrier diffusion length in thin wafers of semiconductor crystals
    Bolesov, I.A.
    Astakhov, V.P.
    Karpov, V.V.
    Pribory i Tekhnika Eksperimenta, 2003, 46 (02): : 93 - 95
  • [6] Measurement of the Minority Carrier Diffusion Length in Thin Wafers of Semiconductor Crystals
    I. A. Bolesov
    V. P. Astakhov
    V. V. Karpov
    Instruments and Experimental Techniques, 2003, 46 : 225 - 227
  • [7] Crystalline Si solar cells based on solar grade silicon materials
    Liang, Z. C.
    Chen, D. M.
    Liang, X. Q.
    Yang, Z. J.
    Shen, H.
    Shi, J.
    RENEWABLE ENERGY, 2010, 35 (10) : 2297 - 2300
  • [8] Theoretical analysis of the effect of doping and minority charge carrier life time in CIGS solar cells
    Mohamed, H. A.
    Taya, Y. A.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2021, 15 (3-4): : 157 - 163
  • [9] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD
    JUND, C
    SOLID-STATE ELECTRONICS, 1966, 9 (04) : 315 - &
  • [10] Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells
    Sun Haizhi
    Liu Caichi
    Hao Qiuyan
    Wang Lijian
    RARE METALS, 2006, 25 (6 SUPPL. 1) : 141 - 145
12345