共 50 条
- [41] Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 193 - 197
- [42] Potential-Induced Degradation of a Si Nitride/Crystalline Si Interface Observed Through Minority Carrier Lifetime Measurement 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 1385 - 1388
- [45] Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method Electronic Materials Letters, 2016, 12 : 426 - 430
- [46] IMPROVED DIFFERENTIAL PHOTOCURRENT METHOD FOR MEASUREMENT OF OPTICAL-ABSORPTION COEFFICIENT AND MINORITY-CARRIER DIFFUSION LENGTH IN A SEMICONDUCTOR REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (09): : 1165 - 1168
- [47] MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SILICON SOLAR-CELLS USING AN AC LIGHT-SOURCE SOLAR CELLS, 1990, 29 (01): : 73 - 81