Theory of boron doping in a-Si:H

被引：0
|
作者：
机构：
来源：
Phys Rev B | / 4卷 / 1864期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] The influence of doping on charge carrier transport in a-Si:H
    Herm, D
    von Aichberger, S
    Kunst, M
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 195 - 201
  • [12] On the diffusion of boron in glow-discharge a-Si:H
    Schoelch, H.P.
    Kalbitzer, S.
    Fink, D.
    Behar, M.
    Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1988, B1 (01): : 135 - 137
  • [13] PHOTOCONDUCTIVITY OF LIGHTLY BORON DOPED a-Si:H.
    Jousse, D.
    Chaussat, C.
    Vaillant, F.
    Bruyere, J.C.
    Lesimple, F.
    1600, (77-78 Dec II):
  • [14] Modulation doping in a-Si:H/a-Ge:H multilayer structures
    Yamashita, K
    Deki, H
    Miyazaki, S
    Hirose, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 800 - 803
  • [15] Optimum doping level in a-Si:H and a-SiC:H materials
    Hadjadj, A
    St'ahel, P
    Cabarrocas, PRI
    Paret, V
    Bounouh, Y
    Martin, JC
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 830 - 836
  • [16] Persistent photoconductivity in doping-modulated a-Si:H multilayers
    Ito, Hiroshi
    Kikuchi, Minoru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (10): : 1787 - 1792
  • [17] Theory of phosphorus doping in α-Si:H
    Fedders, PA
    PHYSICAL REVIEW B, 1998, 58 (11): : 7020 - 7023
  • [18] Doping effects on the optical properties of evaporated a-Si:H films
    Bakry, AM
    El-Naggar, AH
    THIN SOLID FILMS, 2000, 360 (1-2) : 293 - 297
  • [19] Influence of TCO and a-Si:H Doping on SHJ Contact Resistivity
    Luderer, Christoph
    Tutsch, Leonard
    Messmer, Christoph
    Hermle, Martin
    Bivour, Martin
    IEEE JOURNAL OF PHOTOVOLTAICS, 2021, 11 (02): : 329 - 336
  • [20] Dependence of electrical conductivity on selenium and sulphur doping in a-Si:H
    Sharma, SK
    Baveja, J
    Mehra, RM
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2003, 41 (06) : 491 - 494
12345