HEAVILY Sn-DOPED GaAs BUFFER LAYERS FOR AlGaAs/GaAs HBTs.

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作者：
Ito, Hiroshi [1 ]
Ishibashi, Tadao [1 ]
机构：
[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27卷 / 04期
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：707 / 709
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